IRF-520N N-MOSFET 100V 10A 48W 0.2ohm TO-220

1.40€

A1. Type Designator: IRF520N

Type of IRF520 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 70

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 175

Rise Time of IRF520 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 450

Maximum drain-source on-state resistance (Rds), Ohm: 0.27

Package: TO220

Lisää koriin:

  • Malli: IRF-520N
  • Paino: 0.01kg
  • 2 Kpl varastossa
  • Valmistaja: IRF


Tämä tuote on tullut valikoimiimme lauantai 09 huhtikuu, 2016.

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