FQP13N10 Encapsulation:TO-220,100V N-Channel QFET TO220AB

1.50€

A1.
Replacment-Output-Transistors-President-Lincoln-2-CRT-9900-Anytone-6666-13N10
Type Designator: FQP13N10

Type of FQP13N10 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 65

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 25

Maximum drain current |Id|, A: 12.8

Maximum junction temperature (Tj), °C: 175

Rise Time of FQP13N10 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.18

Package: TO220

Lisää koriin:

  • Malli: 13N10
  • Paino: 0.01kg
  • 6 Kpl varastossa


Tämä tuote on tullut valikoimiimme keskiviikko 14 syyskuu, 2016.

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